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基于N32L406MB EasyFlash参数（key-value）记录库移植

news 来源：原创 2024/9/20 14:30:09

EasyFlash

感谢作者的分享https://github.com/armink/EasyFlash

EasyFlash是一款开源的轻量级嵌入式Flash存储器库，方便开发者更加轻松的实现基于Flash存储器的常见应用开发

三大实用功能

ENV快速保存产品参数(key-value)，支持 写平衡（磨损平衡） 及 掉电保护 功能

EasyFlash不仅能够实现对产品的 设定参数 或 运行日志 等信息的掉电保存功能，还封装了简洁的 增加、删除、修改及查询 方法，降低了开发者对产品参数的处理难度，也保证了产品在后期升级时拥有更好的扩展性。让Flash变为NoSQL（非关系型数据库）模型的小型键值（Key-Value）存储数据库。

IAP 在线升级再也不是难事儿

该库封装了IAP(In-Application Programming)功能常用的接口，支持CRC32校验，同时支持Bootloader及Application的升级。

Log 无需文件系统，日志可直接存储在Flash上

移植

下载源码

https://github.com/armink/EasyFlash

https://gitee.com/Armink/EasyFlash

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复制源码

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添加源码至工程

配置文件参考stm32f103中的配置文件和接口文件

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添加头文件

…\middle\easyflash\inc

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修改配置文件


#ifndef EF_CFG_H_
#define EF_CFG_H_#include "n32l40x.h"/* 使用 ENV 功能 默认NG using ENV function, default is NG (Next Generation) mode start from V4.0 */
#define EF_USING_ENV/* 使用 IAP 功能  using IAP function */
//#define EF_USING_IAP/* using save log function */
/* #define EF_USING_LOG *//* stm32 的扇区大小 page size for stm32 flash */
#if defined(STM32F10X_LD) || defined(STM32F10X_LD_VL) || defined (STM32F10X_MD) || defined (STM32F10X_MD_VL)
#define PAGE_SIZE     1024
#else
#define PAGE_SIZE     2048  //N32L406=>2K
#endif/* 最小的擦除大小 the minimum size of flash erasure */
#define EF_ERASE_MIN_SIZE         PAGE_SIZE              /* it is one page for STM3210x *//* 闪存写入粒度，单位：位 the flash write granularity, unit: bit* only support 1(nor flash)/ 8(stm32f4)/ 32(stm32f1)/ 64(stm32l4) */
#define EF_WRITE_GRAN             32/* The size of read_env and continue_ff_addr function used*/
#define EF_READ_BUF_SIZE             32     /* @default 32, 较大的数字可以提高alloc_env的首次速度，但需要更多的堆栈空间Larger numbers can improve first-time speed of alloc_env but require more stack space*//*** This all Backup Area Flash storage index. All used flash area configure is under here.* |----------------------------|   Storage Size* | Environment variables area |   ENV area size @see ENV_AREA_SIZE* |----------------------------|* |      Saved log area        |   Log area size @see LOG_AREA_SIZE* |----------------------------|* |(IAP)Downloaded application |   IAP already downloaded application, unfixed size* |----------------------------|** @note all area sizes must be aligned with EF_ERASE_MIN_SIZE** The EasyFlash add the NG (Next Generation) mode start from V4.0. All old mode before V4.0, called LEGACY mode.** - NG (Next Generation) mode is default mode from V4.0. It's easy to settings, only defined the ENV_AREA_SIZE.* - The LEGACY mode has been DEPRECATED. It is NOT RECOMMENDED to continue using.*   Beacuse it will use ram to buffer the ENV and spend more flash erase times.*   If you want use it please using the V3.X version.*//* 备份区域起始地址 backup area start address  N32L406MB 128K 24K*/
#define EF_START_ADDR                  (FLASH_BASE + 100 * 1024) /* from the chip position: 100KB *//* ENV区域大小。GC至少有一个空扇区。因此，它的定义必须大于或等于2个闪存扇区大小 ENV area size. It's at least one empty sector for GC. So it's definination must more then or equal 2 flash sector size. */
#define ENV_AREA_SIZE                  (10 * EF_ERASE_MIN_SIZE)      /* 8K *//* saved log area size */
/* #define LOG_AREA_SIZE             (10 * EF_ERASE_MIN_SIZE)*/      /* 20K *//* 输出调试信息 print debug information of flash */#define PRINT_DEBUG											 //自定义调试答应函数#endif /* EF_CFG_H_ */

实现接口文件

本实验是基于国民技术的N32L406


#include <easyflash.h>
#include <stdio.h>
#include <stdlib.h>
#include <stdarg.h>
#include "elog.h"/* 默认的环境变量设置default environment variables set for user */
static const ef_env default_env_set[] = {{"iap_need_copy_app","0"},{"iap_copy_app_size","0"},{"stop_in_bootloader","0"},{"device_id","1"},{"boot_times","0"},
};/*** Flash port for hardware initialize.** @param default_env default ENV set for user* @param default_env_size default ENV size** @return result*/
EfErrCode ef_port_init(ef_env const **default_env, size_t *default_env_size) {EfErrCode result = EF_NO_ERR;*default_env = default_env_set;*default_env_size = sizeof(default_env_set) / sizeof(default_env_set[0]);//时钟初始化if(FLASH_HSICLOCK_DISABLE == FLASH_ClockInit()){printf("HSI oscillator not yet ready\r\n");while(1);}return result;
}/*** Read data from flash.* @note This operation's units is word.** @param addr flash address* @param buf buffer to store read data* @param size read bytes size这里大小是字节** @return result*/
EfErrCode ef_port_read(uint32_t addr, uint32_t *buf, size_t size) {EfErrCode result = EF_NO_ERR;uint8_t *buf_8 = (uint8_t *)buf;size_t i;/*copy from flash to ram */for (i = 0; i < size; i++, addr ++, buf_8++) {*buf_8 = *(uint8_t *) addr;}return result;
}/*** Erase data on flash.* @note This operation is irreversible.* @note This operation's units is different which on many chips.** @param addr flash address	flash地址* @param size erase bytes size  这里大小是字节** @return result*/
EfErrCode ef_port_erase(uint32_t addr, size_t size) {EfErrCode result = EF_NO_ERR;
//    FLASH_Status flash_status;
//    size_t erase_pages, i;
//    
//    /* make sure the start address is a multiple of FLASH_ERASE_MIN_SIZE */
//    EF_ASSERT(addr % EF_ERASE_MIN_SIZE == 0);
//    
//    /* calculate pages */
//    erase_pages = size / PAGE_SIZE;
//    if (size % PAGE_SIZE != 0) {
//        erase_pages++;
//    }//    /* start erase */
//    FLASH_Unlock();
//    FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
//    for (i = 0; i < erase_pages; i++) {
//        flash_status = FLASH_ErasePage(addr + (PAGE_SIZE * i));
//        if (flash_status != FLASH_COMPLETE) {
//            result = EF_ERASE_ERR;
//            break;
//        }
//    }
//    FLASH_Lock();/* 解锁*/FLASH_Unlock();/* 擦除 */if (FLASH_COMPL != FLASH_EraseOnePage(addr)){while(1){printf("Flash EraseOnePage Error. Please Deal With This Error Promptly\r\n");}}//加锁FLASH_Lock();return result;
}
/*** Write data to flash.* @note This operation's units is word.* @note This operation must after erase. @see flash_erase.** @param addr flash address* @param buf the write data buffer* @param size write bytes size** @return result*/
EfErrCode ef_port_write(uint32_t addr, const uint32_t *buf, size_t size) {EfErrCode result = EF_NO_ERR;size_t i;uint32_t read_data;//    FLASH_Unlock();
//    FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
//    for (i = 0; i < size; i += 4, buf++, addr += 4) {
//        /* write data */
//        FLASH_ProgramWord(addr, *buf);
//        read_data = *(uint32_t *)addr;
//        /* check data */
//        if (read_data != *buf) {
//            result = EF_WRITE_ERR;
//            break;
//        }
//    }
//    FLASH_Lock();/* 解锁*/FLASH_Unlock();/* Program */for (uint32_t Counter_Num = 0; Counter_Num < size; Counter_Num += 4,buf++){if (FLASH_COMPL != FLASH_ProgramWord(addr + Counter_Num, *buf)){while(1){printf("Flash ProgramWord Error. Please Deal With This Error Promptly\r\n");}}}/* Locks the FLASH Program Erase Controller */FLASH_Lock();return result;
}/*** lock the ENV ram cache*/
void ef_port_env_lock(void) {__disable_irq();
}/*** unlock the ENV ram cache*/
void ef_port_env_unlock(void) {__enable_irq();
}static char log_buf[128];/*** This function is print flash debug info.** @param file the file which has call this function* @param line the line number which has call this function* @param format output format* @param ... args**/
void ef_log_debug(const char *file, const long line, const char *format, ...) {#ifdef PRINT_DEBUGva_list args;/* args point to the first variable parameter */va_start(args, format);/* must use vprintf to print */vsprintf(log_buf, format, args);log_d("[easyflash]:%s", log_buf);// printf("\r");va_end(args);#endif}/*** This function is print flash routine info.** @param format output format* @param ... args*/
void ef_log_info(const char *format, ...) {va_list args;/* args point to the first variable parameter */va_start(args, format);/* must use vprintf to print */vsprintf(log_buf, format, args);log_i("[easyflash]:%s", log_buf);// printf("\r");va_end(args);
}/*** This function is print flash non-package info.** @param format output format* @param ... args*/
void ef_print(const char *format, ...) {va_list args;/* args point to the first variable parameter */va_start(args, format);/* must use vprintf to print */vsprintf(log_buf, format, args);log_v("%s\r\n", log_buf);va_end(args);
}

添加测试代码

这里的第一步就是初始化easyflash_init

void easyflash_demo(void)
{if (easyflash_init() == EF_NO_ERR){uint32_t i_boot_times = NULL;char *c_old_boot_times, c_new_boot_times[11] = {0};/* 从Env获取启动次数(boot_times) */c_old_boot_times = ef_get_env("boot_times");assert_param(c_old_boot_times);i_boot_times = atol(c_old_boot_times);/* 启动次数 +1 */i_boot_times ++;log_v("The system now boot %d times\n\r", i_boot_times);/* 格式化一个字符串 */sprintf(c_new_boot_times,"%d", i_boot_times);/* 设置启动次数*/ef_set_env("boot_times", c_new_boot_times);//保存ef_save_env();}
}

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磨损平衡）

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blob 数据类型的保存和读取测试

  /**blob 数据类型的保存和读取测试*/char buff[10];memset(buff,0,10);if(i_boot_times&1){int save_len;ef_get_env_blob("blob",buff,10,&save_len);elog_hexdump("blob ",10,buff,10);}else{for(int i=0;i<10;i++){buff[i]=i_boot_times&0xff;}ef_set_env_blob("blob",buff,10);}